Dzhafarova, S. Et Al. 1991. Effect of Doping on Exciton States in InSe and GaSe Lamellar Semiconductors. PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS , vol.128 , 235-242.

Dzhafarova, S., Ragimova, N., Abutalybov, G., Guseinov, A., & Abdinov, A., (1991). Effect of Doping on Exciton States in InSe and GaSe Lamellar Semiconductors. PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS , vol.128, 235-242.

Dzhafarova, SEVDA Et Al. "Effect of Doping on Exciton States in InSe and GaSe Lamellar Semiconductors," PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS , vol.128, 235-242, 1991

Dzhafarova, SEVDA Et Al. "Effect of Doping on Exciton States in InSe and GaSe Lamellar Semiconductors." PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS , vol.128, pp.235-242, 1991

Dzhafarova, S. Et Al. (1991) . "Effect of Doping on Exciton States in InSe and GaSe Lamellar Semiconductors." PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS , vol.128, pp.235-242.

@article{article, author={SEVDA CƏFƏROVA Et Al. }, title={Effect of Doping on Exciton States in InSe and GaSe Lamellar Semiconductors}, journal={PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS}, year=1991, pages={235-242} }