Abdinov, A. S. And Babayeva, R. 2018. Features of the Electron Mobility in the n-InSe Layered Semiconductor. SEMICONDUCTORS , vol.52, no.13 , 1662-1668.

Abdinov, A. S., & Babayeva, R., (2018). Features of the Electron Mobility in the n-InSe Layered Semiconductor. SEMICONDUCTORS , vol.52, no.13, 1662-1668.

Abdinov, A., And RƏNA BABAYEVA. "Features of the Electron Mobility in the n-InSe Layered Semiconductor," SEMICONDUCTORS , vol.52, no.13, 1662-1668, 2018

Abdinov, A. S. And Babayeva, RƏNA. "Features of the Electron Mobility in the n-InSe Layered Semiconductor." SEMICONDUCTORS , vol.52, no.13, pp.1662-1668, 2018

Abdinov, A. S. And Babayeva, R. (2018) . "Features of the Electron Mobility in the n-InSe Layered Semiconductor." SEMICONDUCTORS , vol.52, no.13, pp.1662-1668.

@article{article, author={A. Sh. Abdinov And author={RƏNA BABAYEVA}, title={Features of the Electron Mobility in the n-InSe Layered Semiconductor}, journal={SEMICONDUCTORS}, year=2018, pages={1662-1668} }