Naghiyev, T. Et Al. 2024. Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe. EUROPEAN PHYSICAL JOURNAL B , vol.97, no.9 .

Naghiyev, T., Babayeva, R., & Abiyev, A. S., (2024). Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe. EUROPEAN PHYSICAL JOURNAL B , vol.97, no.9.

Naghiyev, TURAL, RƏNA BABAYEVA, And A. S. Abiyev. "Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe," EUROPEAN PHYSICAL JOURNAL B , vol.97, no.9, 2024

Naghiyev, TURAL Et Al. "Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe." EUROPEAN PHYSICAL JOURNAL B , vol.97, no.9, 2024

Naghiyev, T. Babayeva, R. And Abiyev, A. S. (2024) . "Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe." EUROPEAN PHYSICAL JOURNAL B , vol.97, no.9.

@article{article, author={TURAL NAĞIYEV Et Al. }, title={Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe}, journal={EUROPEAN PHYSICAL JOURNAL B}, year=2024}