Akademik Məlumat İdarəetmə Sistemi
Physica Status Solidi (C) Current Topics in Solid State Physics, vol.12, no.6, pp.830-833, 2015 (Scopus)
Photoluminescence (PL) spectra in the band-edge region of bulk single-crystals of layered ternary chalcogenide TlGaSe2 were examined at low temperature using confocal microscopy. Obvious PL emission near the band-edge region appeared only when the excitation light travelled in the direction normal to the c axis of the crystal structure of TlGaSe2. The observed PL spectra were resolved into two Gaussian peaks, A and B, located at 2.01 and 2.10 eV, respectively. By analyzing the excitation intensity dependence of the PL intensity, we assigned peak B to proper free excitons, whereas peak A seems to represent free excitons derived from the distorted crystal structure of TlGaSe2. This is the first observation of free excitons in TlGaSe2 by PL measurement. We also examined the temperature dependence of the PL intensity.