Electrical properties of extruded Gd-doped Bi 85Sb 15

Abdinova G., Bagieva G., Tağıyev M.

Inorganic Materials, vol.44, no.4, pp.406-408, 2008 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 44 Say: 4
  • Nəşr tarixi: 2008
  • Doi nömrəsi: 10.1007/s10789-008-4014-y
  • jurnalın adı: Inorganic Materials
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.406-408
  • Adres: Bəli

Qısa məlumat

We have studied the effect of Gd doping on the electrical properties of extruded Bi 85Sb 15 in the range 77-300 K. The results indicate that gadolinium creates shallow donor levels in Bi 85Sb 15 and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded Bi 85Sb 15. © 2008 MAIK Nauka.