Dependence of carrier mobility on an electric field in gallium selenide crystals

Abdinov A., Babaeva R., Rzayev R.

SEMICONDUCTORS, vol.46, pp.730-735, 2012 (SCI-Expanded)

  • Nəşrin Növü: Article / Article
  • Cild: 46
  • Nəşr tarixi: 2012
  • Doi nömrəsi: 10.1134/s1063782612060024
  • jurnalın adı: SEMICONDUCTORS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.730-735
  • Adres: Bəli

Qısa məlumat

The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity (ρ d. r ≈ 10 4-10 8 Ω cm at 77 K) and of the doping level (N = 10 -5, 10 -4, 10 -3, 10 -2, and 10 -1 at %). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample E ≤ 10 2 V/cm is observed in undoped high-resistivity GaSe crystals (ρ d. r ≥ 10 4 Ω cm) and in lightly doped GaSe crystals (N ≤ 10 -2 at %) in the region of T ≤ 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection