Electric-Field-Induced Impurity Effects in <i>p</i>-GaSe Single Crystals

Abdinov A. S., Babaeva R.

INORGANIC MATERIALS, vol.57, no.11, pp.1119-1123, 2021 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 57 Say: 11
  • Nəşr tarixi: 2021
  • Doi nömrəsi: 10.1134/s0020168521110017
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Səhifə sayı: pp.1119-1123
  • Adres: Bəli

Qısa məlumat

Electric-field-induced impurity photoconductivity and spontaneous dark current pulsations have been detected in nominally undoped and rare-earth (gadolinium and erbium) doped (N-REE <= 0.1 at %) p-type gallium selenide (p-GaSe) single crystals and investigated at electric voltages ensuring injection in the crystals. The results demonstrate that both effects are directly due to changes in the charge state of trap levels in the band gap of p-GaSe by injected charge carriers, are independent of the chemical nature of the dopant, and are only determined by the doping level. In higher resistivity crystals, undoped and doped to N-REE <= 0.01 at %, these effects are strongly influenced by random macroscopic defects as well.