Systematic analysis of the optical properties of ZnGa2Se4 single crystal

Asadullayeva S., Jahangirli Z., NAĞIYEV T., Abiyev A.

Current Applied Physics, vol.76, pp.39-44, 2025 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 76
  • Nəşr tarixi: 2025
  • Doi nömrəsi: 10.1016/j.cap.2025.05.007
  • jurnalın adı: Current Applied Physics
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Səhifə sayı: pp.39-44
  • Açar sözlər: Band gap, Color coordinates, Donor and acceptor levels, Photoconductivity, Photoluminescence
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

The single crystals of ZnGa2Se4 compound were grown by gas transportation method. Photoluminescence (PL), photoconductivity (PC) properties was experimentally investigated. PL emission measurements in wide range of temperature (5–300 K) shown that the intensity of PL emission peak increase with decreasing the temperature. Simultaneously, blue shifts from 536 nm (2.31 eV) to 530 nm (2.34 eV) is observed at PL maxima by decreasing the temperature. Moreover, a strong PL peak with maximum at 1600 nm (0.77 eV) associated with an electronic transition from the acceptor level to the valence band is observed for the first time. The DFT calculations confirmed that PL excitation (PLE) peak at 2.83 eV can be associated with the electronic transition from the VBM to the CBM. Obtained experimental data and ab initio calculations for ZnGa2Se4 single crystals show good agreement. In general, experimental results were confirmed by ab-initio calculations.