Effect of rare-earth doping on the electrical properties of InSe single crystals

Abdinov A. S., Babaeva R. F., Bagirova A. T., Rzaev R.

INORGANIC MATERIALS, vol.42, pp.937-941, 2006 (SCI-Expanded)

  • Nəşrin Növü: Article / Article
  • Cild: 42
  • Nəşr tarixi: 2006
  • Doi nömrəsi: 10.1134/s0020168506090020
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.937-941
  • Adres: Yox

Qısa məlumat

The effect of rare-earth doping (R = Gd, Dy, Ho) to different levels (0, 10(-5), 10(-4), 10(-3), 10(-2), and 10(-1) at %) on threshold switching and low-frequency current oscillations in single crystals of indium selenide, a layered III-VI semiconductor, has been studied in broad ranges of temperatures (77-400 K), wavelengths (0.30-3.50 mu m), and illuminances (up to similar to 10(2) lx). The results are interpreted in terms of the anisotropic chemical bonding in n-InSe and its response to rare-earth doping.