Effects of Rare-Earth (Gd and Er) Doping and Electric Field on the Photoconductivity of <i>p</i>-GaSe Single Crystals

Abdinov A. S., Babaeva R.

INORGANIC MATERIALS, vol.57, no.2, pp.119-123, 2021 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 57 Say: 2
  • Nəşr tarixi: 2021
  • Doi nömrəsi: 10.1134/s0020168521020011
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Səhifə sayı: pp.119-123
  • Adres: Bəli

Qısa məlumat

The photoconductivity of p-GaSe single crystals doped with rare-earth elements (REEs) (gadolinium and erbium) has been studied at doping levels in the range 10(-5) <= N-REE <= 10(-1) at %, temperatures T approximate to 77-300 K, and electric field strengths from 20 to 2500 V/cm. The results demonstrate that the magnitude and characteristics of the photoconductivity of the p-GaSe single crystals are independent of the chemical nature of the dopants and vary nonmonotonically with N-REE. Throughout the temperature range studied, the results obtained for N-REE >= 0.01 at % are well consistent with the theory of photoconduction in spatially uniform crystalline semiconductors. The results obtained at N-REE < 0.01 at % and T <= 250 K can be accounted for by taking into account the presence of random macroscopic defects in the crystals studied.