Nano-design of nanostructured TlInSe2 electronic properties in the conditions of elastic deformation

Nelayev V., Lyskouski V., MƏMMƏDOV N., Medvedev S.

11th International Conference on "The Experience of Designing and Application of CAD Systems in Microelectronics", CADSM 2011, Polyana, Svalyava, Ukraine, 23 - 25 February 2011, pp.403-404, (Full Text) identifier

  • Nəşrin Növü: Conference Paper / Full Text
  • Çap olunduğu şəhər: Polyana, Svalyava
  • Ölkə: Ukraine
  • Səhifə sayı: pp.403-404
  • Açar sözlər: elastic deformation, electronic and magnetic properties, Nanostructured TlInSe2 crystal, spin anisotropy, VASP program package
  • Açıq Arxiv Kolleksiyası: Konfrans Materialı
  • Adres: Bəli

Qısa məlumat

The influence of external elastic compress and tensile deformation on electronic properties of nanostructured TlInSe2 compound is described. Regular changes of the valence band shape and the amount of the band gap from the elastic deformation of the crystal were detected. Simulations were carried out by means of ab initio quantum-mechanical and molecular dynamics methods using Vienna Ab-Initio Simulation Package (VASP). © 2011 Lviv Polytechnic National.