Influence of electron irradiation on the band gap and microhardness of TlInS2, TlInSSe and TlIn0.99Cr0.01S2 single crystals

Khallokov F., İmanova G., Umarov S., Tashmetov M., Gasanov N., Esanov Z., ...daha çox

Materials Research Innovations, vol.29, no.1, pp.46-50, 2025 (Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 29 Say: 1
  • Nəşr tarixi: 2025
  • Doi nömrəsi: 10.1080/14328917.2024.2363583
  • jurnalın adı: Materials Research Innovations
  • Jurnalın baxıldığı indekslər: Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Səhifə sayı: pp.46-50
  • Açar sözlər: band gap, crystals, Electron, irradiation, microhardness
  • Adres: Bəli

Qısa məlumat

This work investigated the effect of partial replacement of sulphur atoms with selenium atoms (TlInSSe) and indium atoms with chromium atoms (TlIn0.99Cr0.01S2) on the band gap and microhardness of TlInS2 single crystals irradiated with electrons with energy of 2 MeV and a fluence of up to 1.5 × 1017 el/cm2. The band gap from the measured absorption spectra was determined using the Tauc method. It has been established that this irradiation leads to a decrease in the band gap in TlInS2, TlInSSe and TlIn0.99Cr0.01S2 crystals. It has been shown that after electron irradiation the microhardness of these crystals increased due to an increase in the size of crystallites on their surface.