First principle study of structural and electronic transport properties of zigzag GaAs SWNT

Dey D., Roy P., De D.

2nd International Conference on Devices for Integrated Circuit, DevIC 2017, Kalyani, Nadia, India, 23 - 24 March 2017, pp.625-629, (Full Text) identifier identifier

  • Nəşrin Növü: Conference Paper / Full Text
  • Doi nömrəsi: 10.1109/devic.2017.8074026
  • Çap olunduğu şəhər: Kalyani, Nadia
  • Ölkə: India
  • Səhifə sayı: pp.625-629
  • Açar sözlər: DFT, GaAs, NEGF, Transport property, zigzag SWNT
  • Açıq Arxiv Kolleksiyası: Konfrans Materialı, Məqalə
  • Adres: Yox

Qısa məlumat

The structural and electronic transport properties of the zigzag single walled GaAs nanotube has been investigated using the combination of Density Functional Theory conjugated with Non Equilibrium Green's Function based First Principle approach. The quantum mechanical transmission and tunneling current have been investigated for two different chiralities nanotubes. These results prove that these parameters depend on the diameter of the nanotube. The analysis shows that the quantum mechanical energy and current increases with the increasing diameter of the tube. Though the bond length increases with the increasing diameter of the nanotube, but still the amount of total energy received for (4, 0) confirms the stability of the GaAs nanotubes with high chiralities.