Applied Physics, no.6, pp.76-80, 2014 (Scopus)
In this paper, the results received at experimental research of dependences of key parameters and characteristics of intrinsic photoconductivity on various factors in indium monoselenide (n-InSe) crystals are presented. The received experimental results are explained on the basis of partial disorder of the investigated semiconductor and testify to possibility of manufacturing on the basis of n-InSe crystals multifunctional photodetectors of light - photoresistors, phototriggers with memory and possibilities of accumulation of influence of successive weak light signals.