Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation

Cahangirli Z., Hashimzade F., Huseynova D., MEHDİYEV B., Mustafaev N.

Semiconductors, vol.52, no.7, pp.840-842, 2018 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 52 Say: 7
  • Nəşr tarixi: 2018
  • Doi nömrəsi: 10.1134/s1063782618070060
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.840-842
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.