The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals

Abdinov A., Babayeva R., Rzayev R., Eyvazova G.

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.299-303

  • Nəşrin Növü: Conference Paper / Full Text
  • Cild: 5834
  • Doi nömrəsi: 10.1117/12.628875
  • Çap olunduğu şəhər: Moscow
  • Ölkə: Russia
  • Səhifə sayı: pp.299-303
  • Adres: Yox

Qısa məlumat

The effect of doping by rare earth elements (REE) such as Gd, Ho and Dy at N-REE approximate to 0 divided by 10(-1) at. % on initial, as well as sensibilized IR- photosensitivity in the crystals of layered semiconductor n-InSe have been investigated It is shown that dependence of the initial and sensibilized IR- photosensitivity on the level of doping by REE in investigated InSe crystals is caused by dependence of a degree of spatial heterogeneity of a crystal, energy depth of shallow alpha- sticking levels and slow r-centers of recombination, and also density of shallow alpha- sticking levels on N-REE.