Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2

Kato, A.; Nishigaki, M.; MƏMMƏDOV , NAZİM; Yamazaki, M.; Abdullayeva, S.; Kerimova, E.; Uchiki, H.; Iida, S.

doi:10.1016/s0022-3697(03)00065-9

Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2

Kato A., Nishigaki M., MƏMMƏDOV N., Yamazaki M., Abdullayeva S., Kerimova E., ...daha çox

Journal of Physics and Chemistry of Solids, vol.64, no.9-10, pp.1713-1716, 2003 (SCI-Expanded, Scopus)

Nəşrin Növü: Article / Abstract
Cild: 64 Say: 9-10
Nəşr tarixi: 2003
Doi nömrəsi: 10.1016/s0022-3697(03)00065-9
jurnalın adı: Journal of Physics and Chemistry of Solids
Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Səhifə sayı: pp.1713-1716
Açar sözlər: D. Phase transitions
Adres: Bəli

Qısa məlumat

Anomalies of the temperature coefficient of exciton absorption peak shift of TlGaS2 were observed around 180-190 and 240-250 K. Some Raman lines were found to split at temperatures around 230-260 K. At low temperatures the light irradiation with the photon energy above the band gap energy caused a memory effect of photoluminescence quenching. This effect was observed for the emission appearing at 609 nm. Restoration of this photoluminescence quenching occurred with temperature range of 180-270 K. Complete recovery was attained at temperature above 270 K. The correspondences among the temperature ranges of the exciton absorption peak shift anomalies, the Raman line splitting, and the disappearance of the memory effect are considered to show that in TlGaS 2 successive phase transitions occur around 180-190 and 230-260 K. © 2003 Elsevier Ltd. All rights reserved.