UNEC Journal of Engineering and Applied Sciences, vol.1, no.1, pp.12-21, 2021 (Scopus)
The electrical and thermal properties of extruded samples of Bi85Sb15 modified with ZrO2 were investigated depending on the dose of gamma radiation in the temperature range ~77÷300 K and the magnetic field strength (H) ~ 74x104 A / m. It was found that the increase in the mobility in modified Bi85Sb15 is associated with the radiation introduction of acceptor (negatively charged) centers, which at low doses are generated mainly in the regions of positive ionic cores, which, as a result, partial neutralization of the ionic cores occurs, which leads to a decrease in the efficiency of impurity scattering of carriers. charge and partially neutralized centers and, accordingly, to some increase in mobility. A change in the subsystem of defects in extruded modified samples of the Bi85Sb15 solid solution under the influence of gamma radiation causes a change in the spectrum of localized states and the process of electron scattering, which leads to corresponding changes in the presented electrical and thermal parameters.