Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

Abdinov A. S., Babayeva R., Amirova S. I., Rzayev R.

SEMICONDUCTORS, vol.47, no.8, pp.1013-1017, 2013 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 47 Say: 8
  • Nəşr tarixi: 2013
  • Doi nömrəsi: 10.1134/s1063782613080022
  • jurnalın adı: SEMICONDUCTORS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.1013-1017
  • Adres: Yox

Qısa məlumat

In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility (mu) on the initial dark resistivity is experimentally investigated at 77 K (rho d (0)), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences mu(T), mu(rho d (0)), and mu(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.