A first principle approach to design gated p-i-n nanodiode

Dey D., Roy P., Purkayastha T., De D.

Journal of Nano Research, vol.36, pp.16-30, 2016 (SCI-Expanded, Scopus) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 36
  • Nəşr tarixi: 2016
  • Doi nömrəsi: 10.4028/www.scientific.net/jnanor.36.16
  • jurnalın adı: Journal of Nano Research
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.16-30
  • Açar sözlər: DFT, GaAs nano wire, Negative Differential Resistance, NEGF, p-i-n diode
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

Thanks to the world of nano technology; it is possible to build molecular nano devices. In this paper, GaAs single nano wire molecular p-i-n diode is designed and its electronic transmission properties, Local Device Density of States, Highest Occupied Molecular Orbital-Lowest Unoccupied Molecular Orbital plot and Negative Differential Resistance property are investigated from the atomic perspective using first principle Density Functional Theory-Non Equilibrium Green's Function approach. This molecular structure is built and simulated in Virtual Nano Lab atmosphere. The Negative Differential Resistance of the device is revealed through the currentvoltage characteristics of the nano wire. The band-to-band tunneling current is observed for this p-in junction nano diode. Thermal co-efficient, Peltier co-efficient, and Seebeck co-efficients at different gate bias are obtained. This nano wire GaAs molecular diode is attractive for the next generation low power nano device design. Electrical doping effect has been introduced in the wire without adding unambiguous dopants to the molecular wire