Weak antilocalization in thin films of the Bi2Te2.7Se0.3 solid solution

Abdullaev N., Alekperov O., Aligulieva K. V., Zverev V., Kerimova A., MƏMMƏDOV N.

Physics of the Solid State, vol.58, no.9, pp.1870-1875, 2016 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 58 Say: 9
  • Nəşr tarixi: 2016
  • Doi nömrəsi: 10.1134/s106378341609002x
  • jurnalın adı: Physics of the Solid State
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.1870-1875
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

A technology has been developed for the preparation of thin films of the Bi2Te2.7Se0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.