Multiple Coexisting Dirac Surface States in Three-Dimensional Topological Insulator PbBi6Te10

Papagno M., Eremeev S. V., Fujii J., Aliev Z. S., Babanlı M., Mahatha S. K., ...daha çox

ACS Nano, vol.10, no.3, pp.3518-3524, 2016 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 10 Say: 3
  • Nəşr tarixi: 2016
  • Doi nömrəsi: 10.1021/acsnano.5b07750
  • jurnalın adı: ACS Nano
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.3518-3524
  • Açar sözlər: ARPES, DFT, Dirac surface states, STM, topological insulator
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure of three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence multiple coexisting Dirac surface states at the zone-center of the reciprocal space, displaying distinct electronic band dispersion, different constant energy contours, and Dirac point energies. We also provide evidence of Rashba-like split states close to the Fermi level, and deeper M- and V-shaped bands coexisting with the topological surface states. The experimental findings are in agreement with scanning tunneling microscopy measurements revealing different surface terminations according to the crystal structure of PbBi6Te10. Our experimental results are supported by density functional theory calculations predicting multiple topological surface states according to different surface cleavage planes.