On the Mechanisms of Formation of Memory Channels and Development of Negative Differential Resistance in Solid Solutions of the ТlInТe2–ТlYbТe2 System

, Əhmədova A.

RUSSIAN PHYSICS JOURNAL, no.60, pp.2193-2196, 2018 (SCI-Expanded)

  • Nəşrin Növü: Article / Review
  • Nəşr tarixi: 2018
  • jurnalın adı: RUSSIAN PHYSICS JOURNAL
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.2193-2196
  • Adres: Bəli

Qısa məlumat

The behavior of an electronic subsystem is investigated in the course of formation and development of a memory channel in solid solutions of the TlInTe2–TlYbTe2 system. An analysis of the current-voltage characteristics allows getting an insight into the reason for a sharp change in electrical conductance of the specimens under study during their transition from the high-resistance to high-conductance state and the reasons for the well known instability of threshold converters, which makes it possible to design devices with high threshold voltage stability.