Photodetectors for UV and visible ranges based on the monogallium selenide crystals

Abdinov A., Babayeva R., Ragimova N., Rasulov E.

Applied Physics, vol.2016-January, no.6, pp.72-76, 2016 (Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 2016-January Say: 6
  • Nəşr tarixi: 2016
  • jurnalın adı: Applied Physics
  • Jurnalın baxıldığı indekslər: Scopus
  • Səhifə sayı: pp.72-76
  • Açar sözlər: Broadband, Doping, Dysprosium, Optical detector, Optoelectronics, Photoconductivity, Rare earth element, Single crystal, Spectrum
  • Adres: Yox

Qısa məlumat

Consideration is given to the effect of dysprosium doping on photoconductivity of the gallium selenide crystals (p-GaSe). It was established that most stable photoelectric parameters and characteristics of the semiconductor are observed in determining the content of the impurity (N = 10-2÷10-1 at. %). The results are explained on the basis of a double-barrier energy model for spatially inhomogeneous semiconductor. It is obtained that single p-GaSe crystals may be as suitable materials for creation of broadband photodetectors for UV and visible ranges of optical spectrum.