Characterization of rare-earth-doped photocells based on p-GaSe/n-InSe heterojunctions

Abdinov A. S., Babayeva R., Aliyev Y. I.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2024 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Nəşr tarixi: 2024
  • Doi nömrəsi: 10.1142/s0217979225500894
  • jurnalın adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, INSPEC, Metadex, zbMATH, Civil Engineering Abstracts
  • Adres: Bəli

Qısa məlumat

The effect of doping with holmium (Ho) and erbium (Er) rare-earth elements (REE) on the main parameters and characteristics of photocells based on p-GaSe/n-InSe heterostructures has been experimentally studied. Photo-electromotive force measurements were performed for undoped and rare-earth doped samples and obtained results comparatively analyzed. The light characteristic of the samples shows that significant improvement are observed in the rare-earth doped crystals. The possibility of targeted control, as well as increasing their reproducibility and stability by changing the content of the introduced impurity (NREE), is shown. The optimal situation is provided by alloying Er with NREE approximate to 10-1 at.%.