Electrical and Photoelectrical Characteristics of <i>?</i>-Si/Porous-Si/CdS Heterojunctions

Mamedov, H.; Kukevecz, A.; Konya, Z.; Kordas, K.; Shah, S.; Mamedov, V.; Ahmedova, Kh.; Mamedova, V.; Rzaev, Rövnəq; Shamilova, Sh.; Khanmamedova, E.; Agazade, L.

doi:10.1007/s11182-018-1584-2

Electrical and Photoelectrical Characteristics of <i>?</i>-Si/Porous-Si/CdS Heterojunctions

istinad üçün kopyala

Mamedov H. M., Kukevecz A., Konya Z., Kordas K., Shah S. I., Mamedov V. U., ...daha çox

RUSSIAN PHYSICS JOURNAL, vol.61, no.9, pp.1660-1666, 2019 (SCI-Expanded)

Nəşrin Növü: Article / Article
Cild: 61 Say: 9
Nəşr tarixi: 2019
Doi nömrəsi: 10.1007/s11182-018-1584-2
jurnalın adı: RUSSIAN PHYSICS JOURNAL
Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Səhifə sayı: pp.1660-1666
Adres: Bəli

Qısa məlumat

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous-Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10-16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.