The effect of doping by rare earth elements on initial and sensibilized IR-photosensivity of layered Indium selenide crystals.

Rzayev R., Abdinov A., Babayeva R., Eyvazova G.

Other, pp.299-303, 2004

  • Nəşrin Növü: Other Publication / Other
  • Nəşr tarixi: 2004
  • Səhifə sayı: pp.299-303
  • Adres: Bəli

Qısa məlumat

The effect of doping by rare earth elements (REE) such as Gd, Ho and Dy at NREE≈0≈10-1 at. % on initial, as well as sensibiized IR-photosensitivity in the crystals of layered semiconductor n-InSe have been investigated. It is shown that dependence of the initial and sensibilized IR-photosensitivity on the level of doping by REE in investigated InSe crystals is caused by dependence of a degree of spatial heterogeneity of a crystal, energy depth of shallow α-sticking levels and slow r-centers of recombination, and also densitity of shallow α-sticking levels on NREE.