Akademik Məlumat İdarəetmə Sistemi
Ceramics International, vol.51, no.14, pp.19145-19155, 2025 (SCI-Expanded, Scopus)
This paper investigates the impact of annealing on the electrophysical properties of highermanganese silicide (Mn4Si7) thin films. Annealing results in increased crystal size and reduced scattering at crystal boundaries, which enhances carrier mobility (μ) and improves the material's electrophysical characteristics. The enlargement of crystal size leads to decreased resistance and scattering, thereby increasing electrical conductivity (σ). Additionally, the annealing process contributes to the enhancement of the Mn4Si7thin films' electrical conductivity and other electrophysical properties through crystal growth. The analysis of the optical absorption coefficients of Mn4Si7and mica substrates provides insights into the phonon modes, changes in crystal structure, and optical properties of the materials. Mica substrates exhibit distinct high and low-frequency phonon modes, while the Mn4Si7films display changes in the energy levels of phonon modes.The observed increase in electrical conductivity is associated with enhanced carrier mobility and a reduction in network width, indicating improved stability and energetic properties of the Mn4Si7crystal structure. Thin films with a forbidden bandgap of 0.878 eV are suitable for detecting near-infrared (NIR) radiation in the range of 1.41 μm, useful for applications such as thermal imaging and night vision. Thin films with forbidden bandgaps of 0.405 eV, 0.387 eV, and 0.371 eV are employed for detecting mid-infrared(MIR) radiation at wavelengths of 3.06 μm, 3.20 μm, and 3.34 μm, respectively, and are applicable in sensors for detecting gases like CO2 and CH4. Thin films with forbidden bandgaps of 0.705 eV, 0.687 eV, and 0.671 eV correspond to wavelengths of 1.76 μm, 1.80 μm, and 1.85 μm, respectively, and are utilized in NIR sensors for optical fiber communication, medical diagnostics, and industrial automation. Finally, a thin film with a forbidden bandgap of 1.178 eV is positioned between the visible and near-infrared regions, approximately at 1.05 μm, and is applicable in photodetectors and solar cells requiring high sensitivity. Highermanganese silicide thin films are ideally suited for NIR sensors, optoelectronic devices, and thermal imaging applications.