Photoconductivity of pure and rare-earth doped <i>p</i>-GaSe single crystals

Babayeva R.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol.37, no.14, 2023 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 37 Say: 14
  • Nəşr tarixi: 2023
  • Doi nömrəsi: 10.1142/s0217979223501394
  • jurnalın adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, INSPEC, Metadex, zbMATH, Civil Engineering Abstracts
  • Adres: Bəli

Qısa məlumat

Photoconductivity characteristic of undoped and gadolinium (Gd)/dysprosium (Dy) co-doped layered p-GaSe semiconductor has been experimentally investigated. A model is proposed to explain the obtained results. The creating possibility of multi-band photodetectors with stable and reproducible parameters is shown and characteristics based on single crystals of p-GaSe are activated with mentioned rare-earth ions with concentration of 10(-2) divided by 10(-1) at.%.