Akademik Məlumat İdarəetmə Sistemi
Other, pp.17-22, 2013
The dependence of the electrical parameters (electrical conductivity, Hall coefficient and obility of free charge carriers) on the temperature at 77-600 K in pure and doped with rare earths element (Ho, Gd, Dy) atoms with N{sub f}ree ≤ 10{sup -}1 at. percent in gallium and indium monoselenide crystals (p-GaSe and n-InSe). It is established that at low temperatures (T ≤ 300-320 K) in both groups of crystals Hall coefficient is independent on T and dark conductivity and the mobility of free charge carriers change with activation on T. Herewith differ greatly also values of σ and μ for pure samples of different origins, as well as doped samples with different N{sub f}ree. The values of electrical parameters do not depend on the chemical nature of the impurities introduced and vary only with doping level. It is shown that the observed features of the dependence of electrophysical parameters on T and N{sub f}ree in the studied p-GaSe and n-InSe crystals is due to partial disordering of this semiconductors and the presence of chaotic drift barriers in their free energy bands.