Broadband solar photocells based on n-InSe

Abdinov A. S., BABAYEVA R., NAĞIYEV T.

International Journal of Modern Physics B, vol.39, no.21, 2025 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 39 Say: 21
  • Nəşr tarixi: 2025
  • Doi nömrəsi: 10.1142/s0217979225501942
  • jurnalın adı: International Journal of Modern Physics B
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, INSPEC, Metadex, zbMATH, Civil Engineering Abstracts
  • Açar sözlər: Doping, induced impurity photoconductivity, macroscopic defects, negative photoconductivity, recombination centers, trapping centers
  • Adres: Bəli

Qısa məlumat

High-quality single crystals of n-Inse were grown by the vertical Bridgman method. The features of intrinsic, negative and induced impurity photoconductivity in undoped and doped with Holmium (Ho) and Erbium (Er) n-InSe single crystals were experimentally studied. The possibilities of creating, on the basis of these studied n-InSe single crystals, broadband (operating in the range of 1.00–3.60 μm of the optical spectrum) solar photocells with fundamentally new operating mechanisms, high stability and reproducibility of parameters and characteristics are shown.