Akademik Məlumat İdarəetmə Sistemi
Other, pp.1013-1017, 2013
In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility (μ) on the initial dark resistivity is experimentally investigated at 77 K (ρd 0), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences μ(T), μ(ρd 0), and μ(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.