Electroluminescence of p-GaSe⟨REE⟩ Single Crystals

Abdinov A. S., Babaeva R.

INORGANIC MATERIALS, vol.55, no.4, pp.325-330, 2019 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 55 Say: 4
  • Nəşr tarixi: 2019
  • Doi nömrəsi: 10.1134/s0020168519040010
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.325-330
  • Adres: Yox

Qısa məlumat

We have studied the electroluminescence (EL) properties of p-GaSe < REE > single crystals doped with N 0.1 at % gadolinium or dysprosium and exhibiting a switching effect (SE). The results demonstrate that, at such values of N, EL and SE parameters and characteristics are independent of the chemical nature of the rare-earth dopant (gadolinium or dysprosium). Rare-earth doping levels in the range N approximate to 10(-2) to 10(-1) at % ensure high stability and reproducibility of the EL and SE parameters. We have examined the feasibility of using p-GaSe < REE > single crystals for the fabrication of high-performance light switches and sources with S-shaped current-voltage characteristics.