Rzayev R., Abdinov A., Babayeva R., Bagirova A.
Other, pp.1040-1043, 2006
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Nəşrin Növü:
Other Publication / Other
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Nəşr tarixi:
2006
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Səhifə sayı:
pp.1040-1043
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Adres:
Bəli
Qısa məlumat
In this paper with the purpose of revealing an opportunity of
creation of photoelectric solar energy converters the pGaSe/n-InSe anizotypic heterojunctions based on p-GaSe
monocrystals are created by the method of landing to optical
contact. Their electric, capacitance and photoelectric
characteristics are investigated. It is shown, that on the basis of pGaSe crystals, where RE - is the rare earth element such as
Gd, Ho and Dy, with percentage of entered impurity NRE=10-2-10-1
аt.%, one can to create photoelectric converters with stable electric
and photoelectric parameters in (0.50≤λ≤1.35 μm) m spectrum
region.