Current-voltage characteristics of ZnGa2Se4 compound polycrystals

Tagiev B., Tagiev O., Əsədullayeva S.

Semiconductors, vol.45, no.1, pp.52-55, 2011 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 45 Say: 1
  • Nəşr tarixi: 2011
  • Doi nömrəsi: 10.1134/s1063782611010209
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.52-55
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

Current-voltage characteristics of the In-ZnGa2Se4-In structure have been studied in the temperature range of 90-335 K. Based on the data calculated for the concentration of three trap types in ZnGa2Se4, the values Nt = 1.4 × 1013, 8.2 × 1012, and 2.6 × 1012 cm-3 are obtained. The contact region transparency Dk*= 10-5, surface recombination velocity Sk = 0.65 m/s, and carrier lifetime τ = 1.5 × 10-4 s were determined. It was found that the current transmission mechanism in electric fields weaker than 103 V/cm is caused by monopolar carrier injection. © 2011 Pleiades Publishing, Ltd.