Electrical conductivity of undoped and rare-earth-doped high-resistivity GaSe crystals

Abdinov A. S., Allakhverdiev S. A., Babaeva R. F., Rzaev R.

INORGANIC MATERIALS, vol.45, pp.723-727, 2009 (SCI-Expanded)

  • Nəşrin Növü: Article / Article
  • Cild: 45
  • Nəşr tarixi: 2009
  • Doi nömrəsi: 10.1134/s0020168509070036
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.723-727
  • Adres: Yox

Qısa məlumat

The time-dependent conductivity of nominally undoped and rare-earth-doped (N (R)a parts per thousand integral 10(-5) to 10(-1) at % Gd, Dy, or Ho) high-resistivity gallium selenide crystals has been measured under various conditions. At a relatively low applied voltage and T a parts per thousand currency sign 150 K, the conductivity of the crystals reaches a steady-state value rather slowly. When a voltage above a certain threshold is applied for a long time at T a parts per thousand currency sign 300 K, the material exhibits electric fatigue. An energy-band model is proposed which provides qualitative explanation of the results.