Multifunctional optoelectronic element based on n-InSe layered semiconductor doped with rare-earth elements

NAĞIYEV T., BABAYEVA R., Abdinov A. S.

Current Applied Physics, vol.80, pp.176-181, 2025 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 80
  • Nəşr tarixi: 2025
  • Doi nömrəsi: 10.1016/j.cap.2025.09.019
  • jurnalın adı: Current Applied Physics
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Səhifə sayı: pp.176-181
  • Açar sözlər: Electroluminescence, Layered semiconductor, Rare-earth element, Switching effect, “Phototrigger effect”
  • Adres: Bəli

Qısa məlumat

The switching effect, the “phototrigger effect,” and electroluminescence were experimentally investigated in both pure and rare-earth (Ho and Er) doped n-InSe crystals. It was established that, under certain conditions, all three effects can be observed simultaneously in the same sample for both groups of crystals. For pure crystals, the parameters of these effects depend on the initial dark resistivity measured at 77 K. In contrast, for rare earth element (REE) doped crystals, the parameters do not depend on the chemical nature of the dopant but vary non-monotonically with its concentration (NREE). The most stable characteristics were observed in pure crystals with the lowest initial specific dark resistivity, and in doped crystals with 10−2