Extrinsic Photoelectric Effects in Holmium- and Erbium-Doped n-InSe Crystals under Combined Excitation

Abdinov A. S., Babaeva R.

Inorganic Materials, vol.58, no.7, pp.696-700, 2022 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 58 Say: 7
  • Nəşr tarixi: 2022
  • Doi nömrəsi: 10.1134/s0020168522070019
  • jurnalın adı: Inorganic Materials
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Səhifə sayı: pp.696-700
  • Açar sözlər: doping, induced extrinsic photoconductivity, macroscopic defects, photoelectric fatigue, rare-earth elements, trap levels
  • Adres: Bəli

Qısa məlumat

Abstract—: This paper presents a detailed experimental study of extrinsic photoelectric effects caused by combined excitation—induced extrinsic photoconductivity (IEP) and optical and thermal elimination of a photoelectric fatigue (PEF) state—in undoped and holmium- and erbium-doped (10–5 to 10–1 at %) indium selenide (n-InSe) crystals. The observed specific features of IEP and detection and elimination of a PEF state are shown to be due to not only the presence of different types of trap levels in the band gap of the crystals but also the presence of random macroscopic defects.