The possibility of increasing the reproductivity and stability of the characteristics of n-InSe/p-GaSe heterostructures

Babayeva, RƏNA; Abdinov, Əhməd; Rəhimova, Nailə; Əmirova, Səbinə; Rəsulov, Eldar

The possibility of increasing the reproductivity and stability of the characteristics of n-InSe/p-GaSe heterostructures

istinad üçün kopyala

Babayeva R., Abdinov Ə., Rəhimova N., Əmirova S., Rəsulov E.

UNEC Journal of Engineering and Applied Sciences, vol.1, pp.22-26, 2021 (Scopus)

Nəşrin Növü: Article / Article
Cild: 1
Nəşr tarixi: 2021
jurnalın adı: UNEC Journal of Engineering and Applied Sciences
Jurnalın baxıldığı indekslər: Scopus
Səhifə sayı: pp.22-26
Adres: Bəli

Qısa məlumat

The main physical properties of heterostructures based on pure and erbium-doped layered p-GaSe and n-InSe semiconductors have been investigated. The possibility of increasing the reproducibility and stability of their main characteristics by doping the contacting pairs with erbium has been revealed.