Electric-field effect on the electrical conductivity of InSe and InSeaOE©Dy⟩ crystals

Abdinov A. S., Babaeva R., Gasanov Y. G., Ragimova N. A., Rzaev R.

INORGANIC MATERIALS, vol.49, no.12, pp.1180-1186, 2013 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 49 Say: 12
  • Nəşr tarixi: 2013
  • Doi nömrəsi: 10.1134/s0020168513120017
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.1180-1186
  • Adres: Yox

Qısa məlumat

We have studied the effect of external dc electric field on the dark conductivity of undoped and dysprosium-doped InSe single crystals having different initial dark conductivities ( to 10(-2) S/cm at 77 K) and doping levels (similar to 10(-5) to 10(-1) at % Dy, respectively). At T a parts per thousand currency sign 200-220 K and E a parts per thousand yen 80-150 V/cm, the sigma(d) of the high-resistivity ( S/cm) undoped and slightly doped (< 10(-2) at % Dy) crystals increases with increasing external electric field. The observed sigma(d)(E) behavior is shown to be unrelated to electric-field-induced heating of charge carriers or other effects of a high electric field when carrier scattering by various point defects and phonons prevails. It is primary due to partial disorder in the crystals, the presence of drift barriers in their empty energy bands, and the influence of injection and doping levels on the dimensions of the barriers.