Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

Igamov B. D., Imanova G., Kamardin A. I., Bekpulatov I. R.

INTEGRATED FERROELECTRICS, vol.240, no.1, pp.53-63, 2024 (SCI-Expanded, Scopus) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 240 Say: 1
  • Nəşr tarixi: 2024
  • Doi nömrəsi: 10.1080/10584587.2023.2296317
  • jurnalın adı: INTEGRATED FERROELECTRICS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Səhifə sayı: pp.53-63
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

The results of complex experimental studies of the parameters of thin coatings of SiO2 oxides on Si, formed by thermal oxidation at temperatures of 1200 degrees C, including studies using electron and X-ray spectroscopy, IR-Fourier spectrometer IRTracer-100 - developed by Shimadzu, Raman scattering, and test electrophysical structures, are presented. Data have been obtained that for a silicon dioxide thickness of about 400 nm, the porosity of the coating does not exceed 2/cm2, and the electric field strength for the breakdown of the dioxide reaches 5 center dot 106 V/cm. The crystal structure of SiO2 is triclinic, lattice period a = 4.9160 angstrom, b = 4.9170 angstrom, c = 5.4070 angstrom, a = 90.000, b = 90.000, gamma = 120.000, density 2.64 g/cm(3).