EMI Modeling of PCB-based Three-Level Active Neutral-Point-Clamped GaN Converter

Adeli M. H., ALTIN N., Deniz E., Nasiri A.

14th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2025, Georgia, United States Of America, 16 - 20 March 2025, pp.1489-1494, (Full Text) identifier

  • Nəşrin Növü: Conference Paper / Full Text
  • Doi nömrəsi: 10.1109/apec48143.2025.10977318
  • Çap olunduğu şəhər: Georgia
  • Ölkə: United States Of America
  • Səhifə sayı: pp.1489-1494
  • Açar sözlər: Active neutral point clamped, common mode, EMI current, EMI modeling, equivalent circuit, GaN switches, inverter, parasitic capacitance
  • Açıq Arxiv Kolleksiyası: Konfrans Materialı
  • Adres: Bəli

Qısa məlumat

This paper investigates the Electromagnetic Interference (EMI) behavior of a Gallium Nitride (GaN)-based three-level Active Neutral Point Clamped (3L-ANPC) converter. GaN-based switches are utilized in the converter design to achieve high switching frequencies and to reduce overall system size and losses, but they pose challenges related to electromagnetic compatibility (EMC). Accurate modeling of the system's Common mode Equivalent circuit Model (CEM) is essential to effectively investigate EMI emissions. In this work, a PCB-integrated converter is designed to mitigate EMI emissions while enhancing system performance and reliability. The PCB structure facilitates a straightforward approach to calculating parasitic capacitances. An analytical approach is also presented for modeling system's CEM, enabling the investigation of the Common Mode (CM) current. Simulations are conducted to evaluate the performance of the CEM by comparing its emission characteristics with those obtained from a Mixed Mode (MM) model.