Dark-current relaxation in MnGa2Se4 single crystals

Tagiev O., Əsədullayeva S., Bachtiyarly I., Tagiev K.

Semiconductors, vol.47, no.5, pp.593-595, 2013 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 47 Say: 5
  • Nəşr tarixi: 2013
  • Doi nömrəsi: 10.1134/s1063782613050205
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.593-595
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

The results of investigation of isothermal currents and charge accumulation in In-MnGa2Se4-In sandwich structures are presented. The obtained data are analyzed on the basis of the theory of isothermal currents and the relay-race mechanism of charge transport. It is shown that the dark-current relaxation in MnGa2Se4 single crystals is associated with charge accumulation at deep levels due to injection from the cathode. The following parameters are determined: the contact capacitance Ck = 2 × 10-13 F, the charge-accumulation-layer thickness dk = 4 × 10-6 cm, and the drift charge-carrier mobility μch = 3 × 10-8 cm2 V-1 s-1 in MnGa2Se4 single crystals. © 2013 Pleiades Publishing, Ltd.