Optical and electronic properties of defect chalcopyrite ZnGa2S4

Asadullayeva S., Ismayilova N., Musayev M., Abbasov I.

International Journal of Modern Physics B, vol.38, no.1, 2024 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 38 Say: 1
  • Nəşr tarixi: 2024
  • Doi nömrəsi: 10.1142/s0217979224500073
  • jurnalın adı: International Journal of Modern Physics B
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, INSPEC, Metadex, zbMATH, Civil Engineering Abstracts
  • Açar sözlər: absorption coe±cient, bandgap, density functional theory, Optical properties, spectroscopic ellipsometry
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

In this paper, we have performed a study on the optical properties of single crystals ZnGa2S4 by method of density functional theory (DFT) and ellipsometry measurements. The calculated results for the real "r and imaginary "i parts of the dielectric function are compared with the measured experimental spectroscopic ellipsometry (SE) spectra in the 0.7–6.5 eV spectral region. Absorption coe±cient-photon energy dependency revealed the existence of direct bandgap transitions with energy 3.5 eV. This result is very close to bandgap obtained from our theoretical calculation.