STRUCTURES FOR CONSTRUCTING DEVICES FROM FORMED Mn4Si7 AND CoSi FILMS

Normuradov M., Bekpulatov I., İmanova G., Igamov B.

Advanced Physical Research, vol.4, no.3, pp.142-154, 2022 (Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 4 Say: 3
  • Nəşr tarixi: 2022
  • jurnalın adı: Advanced Physical Research
  • Jurnalın baxıldığı indekslər: Scopus
  • Səhifə sayı: pp.142-154
  • Açar sözlər: cobalt monosilicide, higher manganese silicide, instrumentation, Magnetron sputtering, photomask, thermal radiation receiver
  • Adres: Bəli

Qısa məlumat

This work provides information on the formation of the main part of thermal radiation receivers. In addition, the article defines and creates optimal modes for creating targets for magnetron sputtering from higher manganese silicide (Mn4Si7) and cobalt monosilicide (CoSi). As is known, the device is formed from a two-type film, where the Mn4Si7 film gives the p-type, and the CoSi film gives the n-type. Films were formed using these targets by magnetron sputtering and their electrophysical properties were studied. The results obtained showed that the resulting films have a structure suitable for instrumentation. The paper also presents theoretical studies on the creation of photomasks to create a device design. Using the method of magnetron sputtering, a structure was created that can be used in thermal radiation receivers. The mechanism of structure formation has been developed.