Akademik Məlumat İdarəetmə Sistemi
16th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 27 May 2000, vol.4340, pp.344-347, (Full Text)
High effective and sufficiently firm materials on the basis of the Bi85Sb15 solid solution doped by Pb impurites have been obtained and investigated. It is shown, that with growth of a doping degree values of thermoelectrical figure of merit (Z) at first grows up to 0.005 at % Pb of and at this concentration reaches value equal approx. 5.0·10-3 K-1 at approx. 200K, and then decreases. In a magnetic field the greatest values of Z for the samples of p-type has one doped by 0,05 at. of % Pb, and Z reaches value approx. 0.84·10-3 K-1 at approx. 80K.