Electrical properties of the metal - Semiconductor structures on the basis of Pb1-xMnxTe

Aliyeva T. D., Abdinova G. D., Akhundova N., Barkhalov B. S.

PROCEEDINGS OF SPIE, vol.6636, pp.700-701, 2007 (Scopus)

  • Nəşrin Növü: Article / Article
  • Cild: 6636
  • Nəşr tarixi: 2007
  • Doi nömrəsi: 10.1117/12.742599
  • jurnalın adı: PROCEEDINGS OF SPIE
  • Jurnalın baxıldığı indekslər: Scopus
  • Səhifə sayı: pp.700-701
  • Adres: Yox

Qısa məlumat

The effect of an annealing at 100-110 °C on contact resistance (r k) and adhesive strength of the contacts to Pb1-xMn xTe / (In-Ag-Au) structure in the temperature range ∼ 77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.