Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

Shvets, I.A.; Klimovskikh, I.I.; Aliev, Z.S.; Babanlı , Məhəmməd; Zúñiga, F.J.; Sánchez-Barriga, J.; Krivenkov, M.; Shikin, A.M.; Chulkov, Evgueni

doi:10.1103/physrevb.100.195127

Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

Shvets I., Klimovskikh I., Aliev Z., Babanlı M., Zúñiga F., Sánchez-Barriga J., ...daha çox

Physical Review B, vol.100, no.19, 2019 (SCI-Expanded, Scopus)

Nəşrin Növü: Article / Article
Cild: 100 Say: 19
Nəşr tarixi: 2019
Doi nömrəsi: 10.1103/physrevb.100.195127
jurnalın adı: Physical Review B
Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Açıq Arxiv Kolleksiyası: Məqalə
Adres: Bəli

Qısa məlumat

By means of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations, the electronic band structure of the topological insulator PbBi4Te4Se3 for both five-layer and seven-layer surface terminations is investigated. The measured and calculated band structure features are in good agreement and indicate two well-resolved topological surface states with distinct spatial localizations within bulk band gap of about 0.3 eV.