Rzayev R., Abdinov A., Babayeva R., Ismayilov R., Eyvazova G.
Other, pp.260-263, 2004
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Nəşrin Növü:
Other Publication / Other
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Nəşr tarixi:
2004
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Səhifə sayı:
pp.260-263
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Adres:
Bəli
Qısa məlumat
By the method of landing to optical contact isotype n-InSe< REE >/n-CuInSe2 heterojunctions with percentage of introduced impurity NREE=0; 10-5; 10-4; 10-3; 10-2 and 10-1 at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on NREE have been found out and mechanisms for their explanations have been offered. |