Modern Physics Letters B, vol.32, no.14, 2018 (SCI-Expanded, Scopus)
In this study, compounds of B6Si were irradiated using a 60Co gamma source that have an energy line of 1.25 MeV at the absorbed dose rates from 14.6 kGy to 194.4 kGy. Surface morphology images of the sample obtained by Scanning Electron Microscope (SEM) show that the crystal structure at a high absorbed doses (D ≥ 145.8kGy) starts to be destroyed. X-ray diffraction studies revealed that with increasing radiation absorption dose, the spectrum intensity of the sample was decreased 1.96 times compared with the initial value. Thermal properties were studied by Differential scanning calorimetry (DSC) method in the temperature range of 30-1000°C.